High density metal gate MOS fabrication process

Details High density metal gate MOS fabrication process High density metal gate MOS fabrication process

1997-02-25

1998-09-08

Trinh, Michael

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438301, 438307, H01L 21336

Patent

active

058044850

ABSTRACT:
A high density metal gate metal-oxide semiconductor fabrication process to selectively and locally oxidize specific regions of a wafer without increasing the numbers of mask, so as to separately control the thickness of the oxide at the gate, P+ zones and N+ zones, the process including the step of forming a first tye trap zone, the step of forming a shielding layer consisting of an oxide pad and a nitride layer, and the step of forming an oxide layer and removing the nitride layer but the oxide pad to be left before the growing of an insulative oxide layer.

REFERENCES:
patent: 4049477 (1977-09-01), Ligon
patent: 4114254 (1978-09-01), Aoki et al.
patent: 4209349 (1980-06-01), Ho et al.
patent: 4409722 (1983-10-01), Dockerty et al.
patent: 5376578 (1994-12-01), Hsu et al.

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