High density magnetic RAM and array architecture using a one...

Details High density magnetic RAM and array architecture using a one... High density magnetic RAM and array architecture using a one...

2005-06-21

2005-06-21

Hoang, Huan (Department: 2818)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000

Reexamination Certificate

active

06909628

ABSTRACT:
A new magnetic RAM cell device is achieved. The device comprises a MTJ cell comprising a free layer and a pinned layer separated by a dielectric layer. A diode is coupled between the free layer and a reading line. A writing switch is coupled between a first end of the pinned layer and a first writing line. A second end of the pinned layer is coupled to a second writing line. Architectures using MRAM cells are disclosed.

REFERENCES:
patent: 5793697 (1998-08-01), Scheuerlein
patent: 6072718 (2000-06-01), Abraham et al.
patent: 6272041 (2001-08-01), Naji
patent: 6335890 (2002-01-01), Reohr et al.
patent: 6418046 (2002-07-01), Naji
patent: 6421270 (2002-07-01), Tai
Tehrani et al., “Progress and Outlook for MRAM Technology”, IEEE Transactions on Magnetics, vol. 35, No. 5, Sep. 1999, pp. 2814-2819.

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