High-density germanium-on-insulator photodiode array

Details High-density germanium-on-insulator photodiode array High-density germanium-on-insulator photodiode array

2007-03-06

2007-03-06

Fourson, George R. (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S141000, C438S328000, C257S233000, C257S577000, C257S594000, C257S601000, C257S656000

Reexamination Certificate

active

11240969

ABSTRACT:
A high-density Germanium (Ge)-on-Insulator (GOI) photodiode array and corresponding fabrication method are provided. The method includes: forming an array of pixel driver nMOST devices, each device having a gate connected to a row line in a first orientation, a first source/drain (S/D) region, and a second S/D region connected to Vdd; forming a P-I-N Ge diode for each pixel as follows:forming a n+ region;forming an intrinsic Ge region overlying the n+ region;forming a p+ junction in the intrinsic Ge; and,isolating the P-I-N Ge diodes; and,forming an Indium Tin oxide (ITO) column in a second orientation, about orthogonal to the first orientation, overlying the P-I-N Ge diodes.

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Yaocheng Liu, Kailash Gopalakrishnan, Peter B. Griffin, Kai Ma, Michael D. Deal, and James D. Plummer, “MOSFETs and High-Speed Photodetectors on Ge-on Insulator Substrates” 2004 IEDM Technical digest p. 1001-1004.

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