Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-11-19
2011-10-11
Nguyen, Cuong Q (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S325000, C257S326000, C257SE29309
Reexamination Certificate
active
08035157
ABSTRACT:
The present invention provides a flash memory device having a high degree of integration and high performance. The flash memory device has a double/triple gate structure where a channel is formed in a wall-shaped body. The flash memory device has no source/drain regions. In addition, although the flash memory device has the source/drain regions, the source/drain region are formed not to be overlapped with a control electrode. Accordingly, an inversion layer is induced by a fringing field generated from the control electrode, so that cell devices can be electrically connected to each other. The flash memory device includes a charge storage node for storing charges formed under the control electrode, so that miniaturization characteristics of cell device can be improved. According to the present invention, there is proposed a new device capable of improving the miniaturization characteristics of a MOS-based flash memory device and increasing memory capacity.
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Park, et al., “A 64-Cell NAND Flash Memory with Asymmetric S/D Structure for Sub-40nm Technology and Beyond,” 2006 Symposium on VLSI Technology Digest of Technical Papers, 2006, IEEE.
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Chung Sungyeop
Meyer Jerald L.
Nguyen Cuong Q
SNU & R&DB Foundation
The Nath Law Group
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