High density FET with self-aligned source atop the trench

Details High density FET with self-aligned source atop the trench High density FET with self-aligned source atop the trench

2008-01-15

2008-01-15

Lee, Hsien-Ming (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S270000, C438S272000

Reexamination Certificate

active

11047243

ABSTRACT:
A method for manufacturing a power semiconductor device which includes forming a semiconductor region such as a polysilicon layer or epitaxially grown silicon over a region implanted with source implants and applying heat in a thermal step to cause the source implants to diffuse into the semiconductor region.

REFERENCES:
patent: 6974750 (2005-12-01), Haase
patent: 7166891 (2007-01-01), Yoshimochi

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