Electronic digital logic circuitry – Multifunctional or programmable – Array
Patent
1998-05-07
2000-10-31
Tokar, Michael
Electronic digital logic circuitry
Multifunctional or programmable
Array
326 47, 326136, G06F 738
Patent
active
061408387
ABSTRACT:
A number of novel new devices and circuits are disclosed utilizing configurable magneto-electronic elements such as magnetic spin transistors and hybrid hall effect devices. Such magneto-electronic elements can be used as building blocks of an entirely new family of electronic devices for performing functions not easily implementable with semiconductor based device. A number of examples are provided, including logic gates that can be programmed to perform different boolean logic operations at different periods of time. Logic devices and circuits incorporating such logic gates have a number of operational advantages and benefits over conventional semiconductor based technologies, including the fact that traditional signal logic operations can be implemented with substantially fewer active elements. A conventional boolean function unit, for example, can be constructed with 2 magneto-electronic elements, and 2 semiconductor elements, which is a 400% improvement over prior art pure semiconductor based technologies.
REFERENCES:
patent: 3631260 (1971-12-01), Yoshino
patent: 4314349 (1982-02-01), Batcher
patent: 4558236 (1985-12-01), Burrows
patent: 4607271 (1986-08-01), Popovic et al.
patent: 4811258 (1989-03-01), Andersen
patent: 4876466 (1989-10-01), Kondou et al.
patent: 4896296 (1990-01-01), Turner et al.
patent: 4905178 (1990-02-01), Mor et al.
patent: 4931670 (1990-06-01), Ting
patent: 4978842 (1990-12-01), Hinton et al.
patent: 4992654 (1991-02-01), Crossland et al.
patent: 4999687 (1991-03-01), Luryi et al.
patent: 5019736 (1991-05-01), Furtek
patent: 5024499 (1991-06-01), Falk
patent: 5058034 (1991-10-01), Murphy et al.
patent: 5089991 (1992-02-01), Matthews
patent: 5109156 (1992-04-01), Evans et al.
patent: 5115497 (1992-05-01), Bergman
patent: 5155434 (1992-10-01), Fujimaki
patent: 5218245 (1993-06-01), Kohler
patent: 5237529 (1993-08-01), Spitzer
patent: 5239504 (1993-08-01), Brady et al.
patent: 5245226 (1993-09-01), Hood et al.
patent: 5245227 (1993-09-01), Furtek et al.
patent: 5251170 (1993-10-01), Daughton et al.
patent: 5289410 (1994-02-01), Katti et al.
patent: 5329480 (1994-07-01), Wu et al.
patent: 5361373 (1994-11-01), Gilson
patent: 5396455 (1995-03-01), Brady et al.
patent: 5420819 (1995-05-01), Pohm
patent: 5424236 (1995-06-01), Daughton et al.
patent: 5432373 (1995-07-01), Johnson
patent: 5452163 (1995-09-01), Coffey et al.
patent: 5475277 (1995-12-01), Johnson
patent: 5488250 (1996-01-01), Hennig
patent: 5491338 (1996-02-01), Spitzer
patent: 5543737 (1996-08-01), Ovshinksy
patent: 5580814 (1996-12-01), Larson
patent: 5594366 (1997-01-01), Khong et al.
patent: 5600845 (1997-02-01), Gilson
patent: 5621338 (1997-04-01), Liu et al.
patent: 5652875 (1997-07-01), Taylor
patent: 5684980 (1997-11-01), Casselman
patent: 5757525 (1998-05-01), Rao et al.
patent: 5794062 (1998-08-01), Baxter
patent: 5862286 (1999-01-01), Imanishi et al.
Application Note, "Atmel PLD Frequently Asked Questions,"p. (8-119)-(8-128), (1997).
James Daughton, "Magnetoresistive Memory Technology," Thin Solid Films, vol. 216, 162 (1992).
R. Meservey, P. M. Tedrow and P. Fulde, Phys. Rev. Lett. 25, 1270 (1970).
P.M. Tedrow and R. Meservey, Phys. Rev. Lett. 26, 192 (1971).
P.M. Tedrow and R. Meservey Phys. Rev. B 7, 318 (1973).
Mark Johnson and R. H. Silsbee, Phys. Rev. Lett. 55, 1790 (1985).
Mark Johnson and R. H. Silsbee Phys. Rev. B 35, 4959 (1987).
Mark Johnson and R. H. Silsbee, Phys. Rev. B 37, 5312 (1988).
Mark Johnson and R. H. Silsbee, Phys. Rev. B 37, 5326 (1988).
Mark Johnson, "The All Metal Spin Transistor," I.E.E.E. Spectrum Magazine, vol. 31 No. 5 p. 47 (1994).
Mark Johnson, "The Bipolar Spin Switch," Science 260, 320 (1993).
R. S. Popovi'c, "Hall-effect Devices," Sens. Actuators 17, 39 (1989).
J. De Boeck, J. Harbison et al., "Non-volatile Memory Characteristics of Submicrometer Hall Structures Fabricated in Epitaxial Ferromagnetic MnA1 Films on GaAs," Electronics Letters 29, 421 (1993).
Paul Horowitz and Winfield Hill, "The Art of Electronics," Cambridge Univ. Press, Cambridge U.K. (1980); p. 328.
Tokar Michael
Tran Anh
LandOfFree
High density and high speed magneto-electronic logic family does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High density and high speed magneto-electronic logic family, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High density and high speed magneto-electronic logic family will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2056400