High coupling floating gate transistor

Details High coupling floating gate transistor High coupling floating gate transistor

2005-07-12

2005-07-12

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S259000, C438S260000, C438S588000, C438S593000, C438S639000

Reexamination Certificate

active

06916707

ABSTRACT:
The present invention provides methods of fabricating floating gate transistors. One method includes forming laterally spaced source and drain regions to define a channel therebetween, forming a first floating gate portion above the channel region, the first floating gate portion extending in a general horizontal direction, forming spacers over the first floating gate portion to define an exposed region on the first floating gate portion, forming a contact coupled to the first floating gate portion at the exposed region, the contact extending vertically above the first portion, forming a second floating gate portion coupled to the contact, the second floating gate portion extending in a general vertical direction, and forming a control gate adjacent to the second portion.

REFERENCES:
patent: 4757360 (1988-07-01), Faraone
patent: 4864464 (1989-09-01), Gonzalez
patent: 5192872 (1993-03-01), Lee
patent: 5281548 (1994-01-01), Prall
patent: 5354705 (1994-10-01), Mathews et al.
patent: 5444279 (1995-08-01), Lee
patent: 5480820 (1996-01-01), Roth et al.
patent: 5732014 (1998-03-01), Forbes
patent: 5880991 (1999-03-01), Hsu et al.
patent: 5897351 (1999-04-01), Forbes
patent: 5914511 (1999-06-01), Noble
patent: 5981335 (1999-11-01), Chi
patent: 6051467 (2000-04-01), Chan et al.
patent: 6066869 (2000-05-01), Noble
patent: 6156607 (2000-12-01), Noble
patent: 6272047 (2001-08-01), Mihnea
patent: 6297989 (2001-10-01), Cloud
patent: 6323085 (2001-11-01), Sandhu
patent: 6323514 (2001-11-01), Kao
patent: 6329240 (2001-12-01), Hsu et al.
patent: 6329277 (2001-12-01), Liu et al.
patent: 6376310 (2002-04-01), Kim
patent: 6384447 (2002-05-01), Mihnea
patent: 6413818 (2002-07-01), Huang et al.
patent: 6448615 (2002-09-01), Forbes
patent: 6461915 (2002-10-01), Rudeck
patent: 6537880 (2003-03-01), Tseng
patent: 6764905 (2004-07-01), Jeng et al.
patent: 2002/0017680 (2002-02-01), Na et al.
patent: 2002/0079523 (2002-06-01), Zheng

Affiliated with

Also associated with

Rating

High coupling floating gate transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High coupling floating gate transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High coupling floating gate transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3385293