High concentration indium fluorine retrograde wells

Details High concentration indium fluorine retrograde wells High concentration indium fluorine retrograde wells

2005-01-04

2005-01-04

Quach, T. N. (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S282000, C438S289000, C438S524000, C438S527000

Reexamination Certificate

active

06838329

ABSTRACT:
A method and apparatus to form a high-concentration, indium-fluorine retrograde well within a substrate. The indium-fluorine retrograde well includes an indium concentration greater than about 3E18/cm3.

REFERENCES:
patent: 5917219 (1999-06-01), Nandakumar et al.
patent: 6372582 (2002-04-01), Rouse et al.
patent: 6610585 (2003-08-01), Brown et al.
patent: 20030008462 (2003-01-01), Horiuchi et al.
patent: 20040061187 (2004-04-01), Weber et al.

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