High aspect ratio, metal-to-metal, linear capacitor for an integ

Details High aspect ratio, metal-to-metal, linear capacitor for an integ High aspect ratio, metal-to-metal, linear capacitor for an integ

1998-03-31

2000-05-02

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257303, H01L 2978, H01L 3300

Patent

active

060575719

ABSTRACT:
A linear capacitor formed in an IC which has horizontally oriented interconnect layers that are vertically separated by dielectric material. Two separated metal plates of the capacitor are electrically connected to the conductors of different vertically-separated metal interconnect layers. The metal plates extend substantially vertically through the thicker dielectric material separating the interconnect layers, to provide a relatively high capacitance per unit of surface consumed. The interconnect layers to which the plates are connected are separated from a substrate of the IC by at least one layer of dielectric, to reduce parasitic effects. Forming the capacitor plates and the interconnect layers from at least some of the same metals simplifies construction and reduces cost, while providing linear response characteristics. Placing the capacitor between the interconnect layers avoids consuming space on the substrate to construct the capacitor.

REFERENCES:
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patent: 5434812 (1995-07-01), Tseng
patent: 5494854 (1996-02-01), Jain
patent: 5494857 (1996-02-01), Cooperman et al.
patent: 5767541 (1998-06-01), Hanagasaki

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