High aspect ratio, high resolution mask fabrication

Details High aspect ratio, high resolution mask fabrication High aspect ratio, high resolution mask fabrication

1980-03-10

1981-10-06

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156630, 156633, 156643, 156644, 156657, 1566591, 156667, 156606, 430296, 430323, 427 85, B44C 122, C03C 1500, C03C 2506, H01L 21425

Patent

active

042933749

ABSTRACT:
A high aspect ratio collimating mask for use in ion beam epitaxy or ion implantation doping is formed through the use of damage-trail-forming materials which are irradiated through a mask and then etched. The high aspect ratio is obtained in part by the sequential formation of a plurality of spaced mask plates. The mask is useful in producing large scale integrated circuits by ion implantation during epitaxial growth of a crystal wafer.

REFERENCES:
patent: 3303085 (1967-02-01), Price et al.
patent: 3415993 (1968-12-01), Fleischer et al.
patent: 3520741 (1970-07-01), Mankarious
patent: 3852134 (1974-12-01), Bean
patent: 4013502 (1977-03-01), Staples
patent: 4021276 (1977-05-01), Cho et al.
Electrical Engineering in Japan, vol. 95, No. 6, Nov.-Dec. 1975, Molecular Beam Epitaxy with Ionized Dopant by N. Matsunaga et al., pp. 28-32.

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