Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-12-10
2010-06-01
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S627000, C438S633000, C438S637000, C438S653000, C438S678000, C257SE21169, C257SE21577
Reexamination Certificate
active
07727890
ABSTRACT:
Disclosed are embodiments of an improved high aspect ratio electroplated metal structure (e.g., a copper or copper alloy interconnect, such as a back end of the line (BEOL) or middle of the line (MOL) contact) in which the electroplated metal fill material is free from seams and/or voids. Also, disclosed are embodiments of a method of forming such an electroplated metal structure by lining a high aspect ratio opening (e.g., a high aspect ratio via or trench) with a metal-plating seed layer and, then, forming a protective layer over the portion of the metal-plating seed layer adjacent to the opening sidewalls so that subsequent electroplating occurs only from the bottom surface of the opening up.
REFERENCES:
patent: 5969422 (1999-10-01), Ting et al.
patent: 6518668 (2003-02-01), Cohen
patent: 6565729 (2003-05-01), Chen et al.
patent: 6610151 (2003-08-01), Cohen
patent: 6709562 (2004-03-01), Andricacos et al.
patent: 6755958 (2004-06-01), Datta
patent: 6793796 (2004-09-01), Reid et al.
patent: 6806186 (2004-10-01), Chen et al.
patent: 6946065 (2005-09-01), Mayer et al.
patent: 6946716 (2005-09-01), Andricacos et al.
patent: 7105434 (2006-09-01), Cohen
patent: 7115196 (2006-10-01), Chen et al.
patent: 7144490 (2006-12-01), Cheng et al.
patent: 7190079 (2007-03-01), Andricacos et al.
patent: 7199052 (2007-04-01), Cohen
patent: 2001/0005056 (2001-06-01), Cohen
patent: 2005/0274621 (2005-12-01), Sun et al.
patent: 2007/0020904 (2007-01-01), Stora
Edelstein Daniel C.
Hon Wong Keith Kwong
Yang Chih-Chao
Yang Haining S.
Gibb I.P. Law Firm LLC
International Business Machines - Corporation
Lee Kyoung
Richards N Drew
LandOfFree
High aspect ratio electroplated metal feature and method does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High aspect ratio electroplated metal feature and method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High aspect ratio electroplated metal feature and method will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4249917