High aspect ratio contact surfaces having reduced contaminants

Details High aspect ratio contact surfaces having reduced contaminants High aspect ratio contact surfaces having reduced contaminants

2005-01-25

2005-01-25

Thompson, Craig A. (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

Reexamination Certificate

active

06847085

ABSTRACT:
Contact openings in semiconductor substrates are formed through insulative layers using an etchant material. The etchant typically leaves behind a layer of etch residue which interferes with the subsequent deposition of conductive material in the opening, as well as the conductive performance of the resulting contact. A method of etch removal from semiconductor contact openings utilizes ammonia to clean the surfaces thereof of any etch residue.

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