Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2005-02-08
2005-02-08
Le, Thong Q. (Department: 2818)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S189040
Reexamination Certificate
active
06853602
ABSTRACT:
System and method for hiding error detecting and correcting latency in a dynamic random access memory refresh cycle. A preferred embodiment comprises in a first memory refresh cycle, detecting the presence of an error in information retrieved from a memory element and in a second memory refresh cycle, writing corrected information back to the memory element containing the erroneous information, wherein the second memory refresh cycle is a memory refresh cycle immediately following the first memory refresh cycle.
REFERENCES:
patent: 6560725 (2003-05-01), Longwell et al.
Le Thong Q.
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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