HfAlO 3 films for gate dielectrics

Details HfAlO 3 films for gate dielectrics HfAlO 3 films for gate dielectrics

2004-08-31

2009-06-30

Wojciechowicz, Edward (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S410000, C257S411000, C257S412000

Reexamination Certificate

active

07554161

ABSTRACT:
A dielectric film containing HfAlO3and a method of fabricating such a dielectric film produce a reliable gate dielectric having an equivalent oxide thickness thinner than attainable using SiO2. A gate dielectric is formed by atomic layer deposition employing a hafnium sequence and an aluminum sequence. The hafnium sequence uses HfCl4and water vapor. The aluminum sequence uses either trimethylaluminium, Al(CH3)3, or DMEAA, an adduct of alane (AlH3) and dimethylehtylamine [N(CH3)2(C2H5)], with distilled water vapor. These gate dielectrics containing a HfAlO3film are thermodynamically stable such that the HfAlO3film will have minimal reactions with a silicon substrate or other structures during processing.

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