Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Reexamination Certificate
2006-06-20
2006-06-20
Barts, Samuel (Department: 1621)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
C438S791000, C438S786000, C438S778000
Reexamination Certificate
active
07064083
ABSTRACT:
A composition and method of preparation, to provide silane compounds that are free of chlorine. The compounds are hexakis(monohydrocarbylamino)disilanes with general formula (I)in-line-formulae description="In-line Formulae" end="lead"?((R)HN)3—Si—Si—(NH(R))3 (I)in-line-formulae description="In-line Formulae" end="tail"?wherein each R independently represents a C1to C4hydrocarbyl. These disilanes may be synthesized by reacting hexachlorodisilane in organic solvent with at least 6-fold moles of the monohydrocarbylamine RNH2(wherein R is a C1to C4hydrocarbyl). Such compounds have excellent film-forming characteristics at low temperatures. These films, particularly in the case of silicon nitride and silicon oxynitride, also have excellent handling characteristics.
REFERENCES:
International Search Report for PCT/EP02/13790.
Chemical Abstracts Service; Schuh, Heinz et al: “Disilanylamines. Compounds comprising the structural unit silicon-silicon-nitrogen, as single-source precursors for plasma-enhanced chemical vapor deposition (PE-CVD) of silicon nitride”.
Chemical Abstracts Service; Wrackmeyer, Bernd et al: “Carbon-13, nitrogen-15 and silicon-29 nuclear magnetic resonance studies of some aminosilanes and aminodisilanes”.
Dussarrat Christian
Girard Jean-Marc
Barts Samuel
L'Air Liquide, Societe Anonyme a Directoire et Conseil de Survei
Russell Linda K.
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