Heterojunction bipolar transistor and manufacturing method...

Details Heterojunction bipolar transistor and manufacturing method... Heterojunction bipolar transistor and manufacturing method...

2007-10-23

2007-10-23

Hoang, Quoc (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S312000, C257S197000, C257SE21372, C257SE21387, C257SE29033

Reexamination Certificate

active

11507008

ABSTRACT:
In the method for manufacturing a heterojunction bipolar transistor, a collector contact layer, a collector layer, a base layer, a base protection layer, an emitter layer, an emitter contact layer, and a WSi layer are sequentially formed on a substrate. A resist pattern is then formed on the WSi layer, and the WSi layer is patterned by using the resist pattern as a mask. Thereafter, the emitter contact layer and the emitter layer are sequentially removed by ICP (Inductively Coupled Plasma) dry etching by using the resist pattern as a mask.

REFERENCES:
patent: 4617724 (1986-10-01), Yokoyama et al.
patent: 6683332 (2004-01-01), Shinozaki et al.
patent: 6803248 (2004-10-01), Sadaka et al.
patent: 2005/0035370 (2005-02-01), Chen
patent: 5-109756 (1993-04-01), None
patent: 11-186278 (1999-07-01), None

Affiliated with

Also associated with

Rating

Heterojunction bipolar transistor and manufacturing method... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Heterojunction bipolar transistor and manufacturing method..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Heterojunction bipolar transistor and manufacturing method... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3877854