Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having junction gate
Reexamination Certificate
2005-03-15
2008-09-30
Smith, Zandra (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having junction gate
C438S411000, C438S421000, C438S481000
Reexamination Certificate
active
07429504
ABSTRACT:
Embodiments of the present invention include heterogeneous substrates, integrated circuits formed on such heterogeneous substrates, and methods of forming such substrates and integrated circuits. The heterogeneous substrates according to certain embodiments of the present invention include a first Group IV semiconductor layer (e.g., silicon), a second Group IV pattern (e.g., a silicon-germanium pattern) that includes a plurality of individual elements on the first Group IV semiconductor layer, and a third Group IV semiconductor layer (e.g., a silicon epitaxial layer) on the second Group IV pattern and on a plurality of exposed portions of the first Group IV semiconductor layer. The second Group IV pattern may be removed in embodiments of the present invention. In these and other embodiments of the present invention, the third Group IV semiconductor layer may be planarized.
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Choi Si-Young
Jung In-Soo
Kim Dong-Won
Kim Sung-Min
Lee Byeong-Chan
Myers Bigel & Sibley & Sajovec
Perkins Pamela E
Smith Zandra
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