Heteroepitaxy by large surface steps

Details Heteroepitaxy by large surface steps Heteroepitaxy by large surface steps

1993-02-02

2000-07-04

Bowers, Charles

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

On insulating substrate or layer

438497, 438503, 438931, 117950, 117951, 117952, H01L 2120

Patent

active

060838124

ABSTRACT:
A method for heteroepitaxial growth and the device wherein a single crystal ceramic substrate, preferably Y stabilized zirconia, MgAl.sub.2 O.sub.4, A1.sub.2 O.sub.3, 3C--SiC, 6H--SiC or MgO is cut and polished at from about 1.0 to about 10 degrees off axis to produce a substantially flat surface. The atoms on the surface are redistributed on the surface to produce surface steps of at least three lattice spacings. An optional epitaxially grown ceramic buffer layer, preferably AlN or GaN, is then formed on the substrate. Then a layer of semiconductor, preferably SiC, AlN when the buffer layer is used and is not AlN or GaN is grown over the substrate and buffer layer, if used.

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