Heteroepitaxial deposition over an oxidized surface

Details Heteroepitaxial deposition over an oxidized surface Heteroepitaxial deposition over an oxidized surface

2011-03-08

2011-03-08

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Mesa formation

C438S044000, C438S413000, C438S416000, C438S419000, C257SE21090, C257SE21092, C117S022000

Reexamination Certificate

active

07901968

ABSTRACT:
Some embodiments of the invention are related to manufacturing semiconductors. Methods and apparatuses are disclosed that provide thin and fully relaxed SiGe layers. In some embodiments, the presence of oxygen between a single crystal structure and a SiGe heteroepitaxial layer, and/or within the SiGe heteroepitaxial layer, allow the SiGe layer to be thin and fully relaxed. In some embodiments, a strained layer of Si can be deposited over the fully relaxed SiGe layer.

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