Hetero-junction electron emitter with Group III nitride and...

Details Hetero-junction electron emitter with Group III nitride and... Hetero-junction electron emitter with Group III nitride and...

2005-03-25

2008-11-04

Patel, Vip (Department: 2889)

Electric lamp and discharge devices

Photosensitive

Photocathode

C313S541000

Reexamination Certificate

active

07446474

ABSTRACT:
A photocathode is capable of generating an electron beam from incident light. The photocathode comprises a light permeable support having a light receiving surface and an opposing surface. A Group III nitride layer is provided on the opposing surface of the support. The Group III nitride layer comprises at least one Group III element and nitrogen. An alkali halide layer is provided on the Group III nitride layer. The alkali halide can be a cesium halide, such as cesium bromide or iodide.

REFERENCES:
patent: 3631303 (1971-12-01), Antypas et al.
patent: 3632442 (1972-01-01), Turnbull et al.
patent: 3814993 (1974-06-01), Kennedy
patent: 3884539 (1975-05-01), Sommer
patent: 3895234 (1975-07-01), O'Keefe et al.
patent: 3914136 (1975-10-01), Kressel
patent: 4193089 (1980-03-01), Brougham et al.
patent: 4287230 (1981-09-01), Galves et al.
patent: 4311939 (1982-01-01), Faulkner et al.
patent: 4390789 (1983-06-01), Smith et al.
patent: 4398118 (1983-08-01), Galves et al.
patent: 4608332 (1986-08-01), Ward
patent: 4616248 (1986-10-01), Khan et al.
patent: 4652762 (1987-03-01), Ward
patent: 4694178 (1987-09-01), Harte
patent: 4725724 (1988-02-01), van der Velden
patent: 4820927 (1989-04-01), Langner et al.
patent: 4914136 (1990-04-01), Drent et al.
patent: 4950952 (1990-08-01), Aramaki
patent: 4970392 (1990-11-01), Oettinger et al.
patent: 5042058 (1991-08-01), Rentzepis
patent: 5426686 (1995-06-01), Rentzepis et al.
patent: 5430292 (1995-07-01), Honjo et al.
patent: 5623182 (1997-04-01), Okano et al.
patent: 5930331 (1999-07-01), Rentzepis et al.
patent: 5982094 (1999-11-01), Niigaki et al.
patent: 5986263 (1999-11-01), Hiroi et al.
patent: 6172365 (2001-01-01), Hiroi et al.
patent: 6184526 (2001-02-01), Kohama et al.
patent: 6198210 (2001-03-01), Kroon et al.
patent: 6259094 (2001-07-01), Nagai et al.
patent: 6265719 (2001-07-01), Yamazaki et al.
patent: 6303918 (2001-10-01), Estrera et al.
patent: 6350999 (2002-02-01), Uenoyama et al.
patent: 6476401 (2002-11-01), Veneklasen et al.
patent: 6531816 (2003-03-01), Breskin et al.
patent: 6538368 (2003-03-01), Fox et al.
patent: 6577058 (2003-06-01), Ossipov et al.
patent: 6580215 (2003-06-01), Nihashi
patent: 6642637 (2003-11-01), Spallas et al.
patent: 2002/0015143 (2002-02-01), Yin et al.
patent: 2002/0028399 (2002-03-01), Nakasuji et al.
patent: 2002/0088940 (2002-07-01), Watanabe et al.
patent: 2002/0100872 (2002-08-01), Hiroi et al.
patent: 2003/0042434 (2003-03-01), Mankos et al.
patent: 2003/0048427 (2003-03-01), Fernandez et al.
patent: 2003/0066963 (2003-04-01), Parker et al.
patent: 2003/0085355 (2003-05-01), Kohama
Maldonado et al.; “Cs Halide Cathode for Multi-Electron Beam Pattern” Punlished by J. VAc. Sci. Technol. Nov, Dec. 2004.
Maldonado et al.; “A thin film p-type GaN Photocathode: Prospect for a high performance..” Thesis, Stanford University 2003.
U.S. Patent Application. entitled, “Electron Beam Pattern Generator With Photocathode Comprising Low Work Function Cesium Halide”; filed Oct. 10, 2002; U.S. Appl. No. 10/282,324; Inventors: Maldonado, et al.
Dinh et al., “Synthesis and characterization of Si/Cs/O nanocluster thin films with negative ion affinity” American Physical Society, 1999.
Kong et al. “Cesium telluride photocathodes,” American Institute of Physics, 1995.

Affiliated with

Also associated with

Rating

Hetero-junction electron emitter with Group III nitride and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Hetero-junction electron emitter with Group III nitride and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Hetero-junction electron emitter with Group III nitride and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4028936