Hermetic cap layers formed on low-κ films by plasma...

Coating apparatus – Program – cyclic – or time control – Having prerecorded program medium

Reexamination Certificate

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C118S696000, C118S715000, C118S7230ER, C700S121000

Reexamination Certificate

active

07399364

ABSTRACT:
A method of forming a cap layer over a dielecrtic layer on a substrate including forming a plasma from a process gas including oxygen and tetraethoxysilane, and depositing the cap layer on the dielectric layer, where the cap layer comprises a thickness of about 600 Å or less, and a compressive stress of about 200 MPa or more. Also, a method of forming a cap layer over a dielectric layer on a substrate including forming a process gas by flowing together about 200 mgm to about 8000 mgm of tetraethoxysilane, about 2000 to about 20000 sccm of oxygen (O2), and about 2000 sccm to about 20000 sccm of carrier gas, generating a plasma from the process gas, where one or more RF generators supply about 50 watts to about 100 watts of low frequency RF power to the plasma, and about 100 watts to about 600 watts of high frequency RF power to the plasma, and depositing the cap layer on the dielectric layer.

REFERENCES:
patent: 5567661 (1996-10-01), Nishio et al.
patent: 5648175 (1997-07-01), Russell et al.
patent: 5744403 (1998-04-01), Dein et al.
patent: 6019848 (2000-02-01), Frankel et al.
patent: 6103601 (2000-08-01), Lee et al.
patent: 6114186 (2000-09-01), Jeng et al.
patent: 6374770 (2002-04-01), Lee et al.
patent: 6475925 (2002-11-01), Braeckelmann et al.
patent: 6599643 (2003-07-01), Heimann et al.
patent: 6633076 (2003-10-01), Krishnaraj et al.
patent: 6635575 (2003-10-01), Xia et al.
patent: 6713389 (2004-03-01), Speakman
patent: 6903004 (2005-06-01), Spencer et al.
patent: 6962859 (2005-11-01), Todd et al.
patent: 7285503 (2007-10-01), Nguyen et al.
patent: 2003/0207033 (2003-11-01), Yim et al.
patent: 2004/0087139 (2004-05-01), Yeh et al.

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