Hemi-spherical grain silicon enhancement

Details Hemi-spherical grain silicon enhancement Hemi-spherical grain silicon enhancement

2005-06-07

2005-06-07

Everhart, Caridad (Department: 2825)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S492000, C438S684000, C257S296000, C257S301000

Reexamination Certificate

active

06902973

ABSTRACT:
Hemi-spherical grain silicon enhancement with epitaxial silicon for semiconductor assemblies is described. Epitaxial silicon is used to enhance hemi-spherical grain silicon on semiconductor structures, such as storage node capacitor plates for a semiconductor assembly. Methods described include forming an optional amorphous silicon layer as a base to firm hemi-shperical grain silicon thereon. The rough texture of the hemi-spherical grain silicon enhances the overall textured surface of the capacitor plate by the addition of epitaxial silicon.

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