Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2008-03-18
2008-03-18
Kebede, Brook (Department: 2823)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S424000, C427S469000, C427S578000, C216S064000
Reexamination Certificate
active
11159834
ABSTRACT:
Plasma etch processes incorporating helium-based etch chemistries can remove dielectric a semiconductor applications. In particular, high density plasma chemical vapor etch-enhanced (deposition-etch-deposition) gap fill processes incorporating etch chemistries which incorporate helium as the etchant that can effectively fill high aspect ratio gaps while reducing or eliminating dielectric contamination by etchant chemical species.
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Huang Judy H.
Lang Chi-I
Limdulpaiboon Ratsamee
Zhu Wenxian
Beyer & Weaver, LLP
Green Phillip S.
Kebede Brook
Novellus Systems Inc.
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