Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2008-03-18
2008-03-18
Kebede, Brook (Department: 2823)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S424000, C427S469000, C427S578000, C216S064000
Reexamination Certificate
active
07344996
ABSTRACT:
Plasma etch processes incorporating helium-based etch chemistries can remove dielectric a semiconductor applications. In particular, high density plasma chemical vapor etch-enhanced (deposition-etch-deposition) gap fill processes incorporating etch chemistries which incorporate helium as the etchant that can effectively fill high aspect ratio gaps while reducing or eliminating dielectric contamination by etchant chemical species.
REFERENCES:
patent: 4361461 (1982-11-01), Chang
patent: 5129958 (1992-07-01), Nagashima et al.
patent: 5227191 (1993-07-01), Nagashima
patent: 5246885 (1993-09-01), Braren et al.
patent: 5252178 (1993-10-01), Moslehi
patent: 5270264 (1993-12-01), Andideh et al.
patent: 5282925 (1994-02-01), Jeng et al.
patent: 5342801 (1994-08-01), Perry et al.
patent: 5385857 (1995-01-01), Solo de Zaldivar
patent: 5494854 (1996-02-01), Jain
patent: 5516729 (1996-05-01), Dawson et al.
patent: 5532516 (1996-07-01), Pasch et al.
patent: 5621241 (1997-04-01), Jain
patent: 5622894 (1997-04-01), Jang et al.
patent: 5636320 (1997-06-01), Yu et al.
patent: 5641545 (1997-06-01), Sandhu
patent: 5702982 (1997-12-01), Lee et al.
patent: 5705419 (1998-01-01), Perry et al.
patent: 5711998 (1998-01-01), Shufflebotham
patent: 5789818 (1998-08-01), Havermann
patent: 5834068 (1998-11-01), Chern et al.
patent: 5851344 (1998-12-01), Xu et al.
patent: 5858876 (1999-01-01), Chew
patent: 5869902 (1999-02-01), Lee et al.
patent: 5872058 (1999-02-01), Van Cleemput et al.
patent: 5897370 (1999-04-01), Joshi et al.
patent: 5910020 (1999-06-01), Yamada
patent: 5911133 (1999-06-01), Soble
patent: 5913140 (1999-06-01), Roche et al.
patent: 5920792 (1999-07-01), Lin
patent: 5937323 (1999-08-01), Orczyk et al.
patent: 5953635 (1999-09-01), Andideh
patent: 5962923 (1999-10-01), Xu et al.
patent: 5963840 (1999-10-01), Xia et al.
patent: 5968610 (1999-10-01), Liu et al.
patent: 5972192 (1999-10-01), Dubin et al.
patent: 6027663 (2000-02-01), Martin et al.
patent: 6030881 (2000-02-01), Papasouliotis et al.
patent: 6037018 (2000-03-01), Jang et al.
patent: 6077451 (2000-06-01), Takenaka et al.
patent: 6077574 (2000-06-01), Usami
patent: 6100205 (2000-08-01), Liu et al.
patent: 6106678 (2000-08-01), Shufflebotham et al.
patent: 6124211 (2000-09-01), Butterbaugh et al.
patent: 6136703 (2000-10-01), Vaartstra
patent: 6149779 (2000-11-01), Van Cleemput
patent: 6184158 (2001-02-01), Shufflebotham et al.
patent: 6200412 (2001-03-01), Kilgore et al.
patent: 6211065 (2001-04-01), Xi et al.
patent: 6232196 (2001-05-01), Raaijmakers et al.
patent: 6265269 (2001-07-01), Chen et al.
patent: 6277764 (2001-08-01), Shin et al.
patent: 6331494 (2001-12-01), Olson et al.
patent: 6335261 (2002-01-01), Natzle et al.
patent: 6395150 (2002-05-01), Van Cleemput et al.
patent: 6400023 (2002-06-01), Huang
patent: 6410446 (2002-06-01), Tsai et al.
patent: 6451705 (2002-09-01), Trapp et al.
patent: 6479361 (2002-11-01), Park
patent: 6479396 (2002-11-01), Xu et al.
patent: 6486081 (2002-11-01), Ishikawa et al.
patent: 6500728 (2002-12-01), Wang
patent: 6531377 (2003-03-01), Knorr et al.
patent: 6566229 (2003-05-01), Hong et al.
patent: 6569777 (2003-05-01), Hsu et al.
patent: 6596653 (2003-07-01), Tan et al.
patent: 6596654 (2003-07-01), Bayman et al.
patent: 6599829 (2003-07-01), Smith et al.
patent: 6617207 (2003-09-01), Kiryu et al.
patent: 6642105 (2003-11-01), Kim et al.
patent: 6706541 (2004-03-01), Toprac et al.
patent: 6737334 (2004-05-01), Ho et al.
patent: 6787483 (2004-09-01), Bayman et al.
patent: 6794290 (2004-09-01), Papasouliotis et al.
patent: 6808748 (2004-10-01), Kapoor et al.
patent: 6812043 (2004-11-01), Bao et al.
patent: 6821905 (2004-11-01), Pan et al.
patent: 6846391 (2005-01-01), Papasouliotis et al.
patent: 6846745 (2005-01-01), Papasouliotis et al.
patent: 6852639 (2005-02-01), Rudolph et al.
patent: 6867086 (2005-03-01), Chen et al.
patent: 6958112 (2005-10-01), Karim et al.
patent: 7001854 (2006-02-01), Papasouliotis et al.
patent: 7067440 (2006-06-01), Bayman et al.
patent: 7078312 (2006-07-01), Sutanto et al.
patent: 7122485 (2006-10-01), Papasouliotis et al.
patent: 7135409 (2006-11-01), Komagata
patent: 7148155 (2006-12-01), Tarafdar et al.
patent: 7163896 (2007-01-01), Zhu et al.
patent: 2001/0019903 (2001-09-01), Shufflebotham et al.
patent: 2001/0044203 (2001-11-01), Huang et al.
patent: 2002/0052119 (2002-05-01), Van Cleemput
patent: 2002/0084257 (2002-07-01), Bjorkman et al.
patent: 2002/0179570 (2002-12-01), Mathad et al.
patent: 2002/0187657 (2002-12-01), Morozumi
patent: 2003/0003244 (2003-01-01), Rossman
patent: 2003/0003682 (2003-01-01), Moll et al.
patent: 2003/0087506 (2003-05-01), Kirchhoff
patent: 2003/0165632 (2003-09-01), Lin et al.
patent: 2003/0203652 (2003-10-01), Bao et al.
patent: 2003/0207580 (2003-11-01), Li et al.
patent: 2004/0020894 (2004-02-01), Williams et al.
patent: 2004/0058549 (2004-03-01), Ho et al.
patent: 2004/0082181 (2004-04-01), Doan et al.
patent: 2004/0110390 (2004-06-01), Takagi et al.
patent: 2004/0241342 (2004-12-01), Karim et al.
patent: 2005/0074946 (2005-04-01), Chu et al.
patent: 2005/0130411 (2005-06-01), Bao et al.
patent: 2005/0136576 (2005-06-01), Ishihara et al.
patent: 2005/0136686 (2005-06-01), Kim et al.
patent: 2005/0250346 (2005-11-01), Schmitt
patent: 2003-031649 (2003-01-01), None
Papasouliotis et al., “Hydrogen-Based Phosphosilicate Glass Process for Gap Fill of High Aspect Ratio Structures”, Novellus Systems, Inc., filed Oct. 11, 2002, U.S. Appl. No. 10/271,333, pp. 1-28.
Guari et al., “Method of Preventing Structures Erosion During Multi-Step Gap Fill”, Novellus Systems, Inc., filed Dec. 4, 2003, U.S. Appl. No. 10/728,569, pp. 1-29.
Bayman et al., “Gap Fill For High Aspect Ratio Structures”, Novellus Systems, Inc., filed Jul. 13, 2004, U.S. Appl. No. 10/890,655, pp. 1-24.
Sutanto et al., “Method For Controlling Etch Process Repeatability”, Novellus Systems, Inc., filed Sep. 2, 2003, U.S. Appl. No. 10/654,113, pp. 1-31.
Bayman et al., “Process Modulation to Prevent Structure Erosion During Gap Fill”, Novellus Systems, Inc., filed Sep. 7, 2004, U.S. Appl. No. 10/935,909, pp. 1-30.
Papasouliotis et al., “Dynamic Modification of Gap-Fill Process Characteristics”, Novellus Systems, Inc., filed Sep. 21, 2004, U.S. Appl. No. 10/947,424, pp. 1-25.
Hook et al., “The Effects of Fluorine on Parametrics and Reliability in a 0.18-μm 3.5/6.8 nm Dual Gate Oxide CMOS Technology”, IEEE Transactions on Electron Devices, vol. 48, No. 7., Jul. 2001, pp. 1346-1353.
Shanker et al., “Hydrogen Treatment Enhanced Gap Fill”, Novellus Systems, Inc., filed Mar. 16, 2005, U.S. Appl. No. 11/082,369, pp. 1-33.
Papasoulitotis et al., “Deposition Profile Modification Through Process Chemistry”, Novellus Systems, Inc., filed Dec. 9, 2002, U.S. Appl. No. 10/316,987, pp. 1-35.
Zhu et al., “Biased H2Etch Process In Deposition-Etch-Deeposition Gap Fill”, Novellus Systems, Inc., filed Dec. 10, 2003, U.S. Appl. No. 10/733,858, pp. 1-28.
Lang et al., “Strain Engineering—HDP Thin Film With Tensile Stress For FEOL and Other Applications”, Novellus Systems, Inc., filed Nov. 17, 2004, U.S. Appl. No. 10/991,890, pp. 1-35.
Lang et al., “Using Water (H20) To Replace Oxygen (02) In A Silicon Dioxide (Si02) Thin Film Deposition Process for HDP STI Technology”, Novellus Systems, Inc., filed Nov. 9, 2005, U.S. Appl. No. 11/272,487, pp. 1-25.
Nguyen et al., “Halogen-Free Noble Gas Assisted H2Plasma Etch Process in Deposition-Etch-Deposition Gap Fill”, Novellus Systems, Inc., filed Mar. 1, 2006, U.S. Appl. No. 11/366,220.
Yu et al., “Stress Profile Modulation in STI Gap Fill,” Novellus Systems, Inc., U.S. Appl. No. 11/471,958, filed Jun. 20, 2006, pp. 1-27.
Huang Judy H.
Lang Chi-I
Limdulpaiboon Ratsamee
Zhu Wenxian
Beyer & Weaver, LLP
Green Phillip S.
Kebede Brook
Novellus Systems Inc.
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