Heavily-doped polysilicon/germanium thin film formed by laser an

Details Heavily-doped polysilicon/germanium thin film formed by laser an Heavily-doped polysilicon/germanium thin film formed by laser an

1998-11-06

2000-10-03

Nelms, David

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438305, 438300, 438303, H01L 218234

Patent

active

061272167

ABSTRACT:
An ultra-large scale integrated (ULSI) circuit includes MOSFETs which have different threshold voltages and yet have the same channel characteristics. The MOSFETs utilize gate structures with heavily doped polysilicon material or heavily doped polysilicon/germanium material. The polysilicon and polysilicon/germanium materials are manufactured by utilizing amorphouse semiconductor layers. Excimer laser annealing is utilized to activate the dopants and to provide a box-like dopant profile.

REFERENCES:
patent: 5290727 (1994-03-01), Jain
patent: 5670397 (1997-09-01), Chang
patent: 5851922 (1998-12-01), Bevk
patent: 5902125 (1999-05-01), Wu

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