Heated and cooled vacuum chamber shield

Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering

Reexamination Certificate

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Details

C204S192120, C204S298110, C204S298070, C432S014000, C165S058000

Reexamination Certificate

active

06881305

ABSTRACT:
The invention is directed to an apparatus and method for reducing particulates in a semiconductor processing chamber. The apparatus comprises a shield for lining at portion of the interior of a vacuum processing chamber. The interior of the shield defines a shield passage. A heater element is disposed within the shield passage. A gas inlet is used for providing gases to the interior of the shield passage. The range of temperatures which may be used is wide and generally fitted to the process. For example, the invention may be used to provide a rapid cooldown or bakeout. Once the temperature is chosen, isothermal conditions can be maintained so as to minimize the thermal cycle stress, reducing cracking, peeling, etc.

REFERENCES:
patent: 5336585 (1994-08-01), Takahashi et al.
patent: 5362526 (1994-11-01), Wang et al.
patent: 5366585 (1994-11-01), Robertson et al.
patent: 5449444 (1995-09-01), Yoshikawa
patent: 5487822 (1996-01-01), Demaray et al.
patent: 5518593 (1996-05-01), Hosokawa et al.
patent: 5728278 (1998-03-01), Okamura et al.
patent: 6083365 (2000-07-01), Kitabatake et al.
patent: 0 196 682 (1986-10-01), None
patent: 1-205066 (1989-08-01), None

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