Heat treatment method for preventing substrate deformation

Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of...

Reexamination Certificate

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C438S109000, C438S502000, C438S664000, C257S686000, C257SE21324, C257SE33075

Reexamination Certificate

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08030225

ABSTRACT:
A heat treatment method which can prevent heat deformation of a substrate caused during a heat treatment process on the substrate with a thin film formed on its surface is provided. The heat treatment method in accordance with the present invention includes (a) stacking a second substrate10bon a first substrate10a; and (b) stacking a weight20on the second substrate10b, wherein the first substrate10aand the second substrate10bare stacked, with thin films12of the substrates10aand10bbeing in contact with each other. In accordance with the present invention, deformation of the substrate can be prevented by stacking the substrates, with thin films formed on the substrates being in contact with each other, and placing a weight on the stacked substrates during the heat treatment process.

REFERENCES:
patent: 5068156 (1991-11-01), Ogata
patent: 6724967 (2004-04-01), Ouellet et al.
patent: 2004/0055152 (2004-03-01), Fraivillig
patent: 58176928 (1983-10-01), None
patent: 20020070826 (2002-09-01), None
patent: 20060045830 (2006-05-01), None

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