Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1999-10-25
2000-12-26
Smith, Matthew
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257508, 257677, 438455, 438459, H01L 2701, H01L 2900, H01L 23495, H01L 2130
Patent
active
061664111
ABSTRACT:
In one embodiment, the present invention relates to a method of forming a silicon-on-insulator substrate involving providing a metal wafer; forming a low melting point oxide layer over the metal wafer; forming a first insulation layer over the low melting point oxide layer to provide a first structure; providing a second structure comprising a silicon layer and a second insulation layer; bonding the first structure and the second structure together so that the first insulation layer is adjacent the second insulation layer forming a buried insulation layer; and removing a portion of the silicon layer thereby providing the silicon-on-insulator substrate comprising a silicon device layer, the buried insulation layer, the low melting point oxide layer, and the metal wafer.
REFERENCES:
patent: 5126820 (1992-06-01), Brown
patent: 5194933 (1993-03-01), Miyagi
patent: 5234535 (1993-08-01), Beyer et al.
patent: 5308594 (1994-05-01), Chen
patent: 5446959 (1995-09-01), Kim et al.
patent: 5463241 (1995-10-01), Kubo
patent: 5488004 (1996-01-01), Yang
patent: 5567629 (1996-10-01), Kubo
patent: 5744410 (1998-04-01), Komatsu et al.
patent: 5744865 (1998-04-01), Jeng et al.
patent: 5770881 (1998-06-01), Pelella et al.
patent: 5780900 (1998-07-01), Suzuki et al.
patent: 5855693 (1999-01-01), Murari et al.
patent: 5874777 (1999-02-01), Ohmi et al.
patent: 6100165 (2000-08-01), Sakaguchi et al.
Advanced Micro Devices , Inc.
Malsawma Lex H.
Smith Matthew
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