Method for making planar 3D heterepitaxial semiconductor structu

Details Method for making planar 3D heterepitaxial semiconductor structu Method for making planar 3D heterepitaxial semiconductor structu

1985-11-18

1988-03-01

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437130, 437133, 437202, 437200, 437201, 437228, 437245, 437915, 437965, 437973, 437936, 437208, 427 531, 427 51, 357 65, 357 60, 357 61, H01L 2948, H01L 2354

Patent

active

047286261

ABSTRACT:
A 3D epitaxial structure is described in which metal compounds are formed in a semiconductor layer, the metal compounds being epitaxial with the semiconductor layer and having a top surface which is planar with the top surface of the semiconductor layer. Onto this another layer can be epitaxially grown, such as an additional semiconductor layer. The technique for forming such a structure utilizes a starting material for metal compound formation which leaves a residue that is preferentially etched in order to preserve the embedded metal compound and to leave a substantially planar surface comprising the metal compound epitaxial regions and the unreacted surface regions of the semiconductor layer.

REFERENCES:
patent: 3938243 (1976-02-01), Rosvold
patent: 4446476 (1984-05-01), Isaac et al.
patent: 4488166 (1984-12-01), Lehrer
patent: 4492971 (1985-01-01), Bean et al.
patent: 4529997 (1985-07-01), Jay et al.
Japan J. Appl. Phys. Suppl. 2, Pt. 1, 1974, "Epitaxial Growth of Nickel Silicide NiSi.sub.2 on Silicon", by K. N. Tu et al., PP. 669-672.
Thin Solid Films, 93(1982), "Epitaxial Silicides", by R. T. Tung et al., pp. 77-90.

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