HDP-CVD process, filling-in process utilizing HDP-CVD, and...

Details HDP-CVD process, filling-in process utilizing HDP-CVD, and... HDP-CVD process, filling-in process utilizing HDP-CVD, and...

2008-08-18

2011-10-11

Lee, Cheung (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S221000, C438S424000, C438S700000, C257SE21546, C257SE21628

Reexamination Certificate

active

08034691

ABSTRACT:
An HDP-CVD process is described, including a deposition step conducted in an HDP-CVD chamber and a pre-heating step that is performed outside of the HDP-CVD chamber before the deposition step and pre-heats a wafer to a temperature higher than room temperature and required in the HDP-CVD process deposition step.

REFERENCES:
patent: 6423653 (2002-07-01), Fu et al.
patent: 6803271 (2004-10-01), Fujiwara et al.
patent: 7033907 (2006-04-01), Kim
patent: 7062662 (2006-06-01), Gauthier et al.
patent: 7208426 (2007-04-01), Huang et al.
patent: 7229912 (2007-06-01), Kim
patent: 2005/0035379 (2005-02-01), Saito
patent: 2005/0118784 (2005-06-01), Kim
patent: 2005/0159007 (2005-07-01), Chen et al.
patent: 2006/0014377 (2006-01-01), Kim
patent: 2006/0105114 (2006-05-01), White
patent: 2007/0212874 (2007-09-01), Sandhu
patent: 00329550 (1998-04-01), None
patent: 00480569 (2002-03-01), None
patent: 200409301 (2004-06-01), None
patent: 200707636 (2007-02-01), None

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