HDP-CVD methodology for forming PMD layer

Details HDP-CVD methodology for forming PMD layer HDP-CVD methodology for forming PMD layer

2007-09-04

2007-09-04

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S680000, C257SE51005, C257SE23116, C257SE21271, C257SE21494

Reexamination Certificate

active

11067043

ABSTRACT:
A method of forming an HDP-CVD pre-metal dielectric (PMD) layer to reduce plasma damage and/or preferential sputtering at a reduced a thermal budget including providing a semiconductor substrate comprising at least two overlying semiconductor structures separated by a gap; forming a PMD layer according to an HDP-CVD process over the at least two overlying semiconductor structures without applying a chucking bias Voltage to hold the semiconductor substrate.

REFERENCES:
patent: 6461966 (2002-10-01), Chen et al.
patent: 6727159 (2004-04-01), Chen et al.
patent: 2003/0003682 (2003-01-01), Moll et al.
patent: 2004/0178419 (2004-09-01), Song
patent: 2004235457 (2004-08-01), None

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