Hardness improvement of silicon carboxy films

Coating processes – Direct application of electrical – magnetic – wave – or... – Pretreatment of substrate or post-treatment of coated substrate

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C427S534000, C427S536000, C427S489000, C427S579000, C438S788000, C438S789000

Reexamination Certificate

active

06936309

ABSTRACT:
A method for depositing a low dielectric constant film having an improved hardness and elastic modulus is provided. In one aspect, the method comprises depositing a low dielectric constant film having silicon, carbon, and hydrogen, and then treating the deposited film with a plasma of helium, hydrogen, or a mixture thereof at conditions sufficient to increase the hardness of the film.

REFERENCES:
patent: 5419782 (1995-05-01), Levine et al.
patent: 5593741 (1997-01-01), Ikeda
patent: 5598027 (1997-01-01), Matsuura
patent: 5599740 (1997-02-01), Jang et al.
patent: 5616369 (1997-04-01), Williams et al.
patent: 5618619 (1997-04-01), Petrmichl et al.
patent: 5637351 (1997-06-01), O'Neal et al.
patent: 5638251 (1997-06-01), Goel et al.
patent: 5679413 (1997-10-01), Petrmichl et al.
patent: 5683940 (1997-11-01), Yahiro
patent: 5693563 (1997-12-01), Teong
patent: 5700720 (1997-12-01), Hashimoto
patent: 5703404 (1997-12-01), Matsuura
patent: 5739579 (1998-04-01), Chiang et al.
patent: 5753564 (1998-05-01), Fukada
patent: 5789319 (1998-08-01), Havemann et al.
patent: 5800877 (1998-09-01), Maeda et al.
patent: 5807785 (1998-09-01), Ravi
patent: 5821168 (1998-10-01), Jain
patent: 5834162 (1998-11-01), Malba
patent: 5858880 (1999-01-01), Dobson et al.
patent: 5874367 (1999-02-01), Dobson
patent: 5888593 (1999-03-01), Petrmichl et al.
patent: 5891799 (1999-04-01), Tsui
patent: 5989998 (1999-11-01), Sugahara et al.
patent: 6037274 (2000-03-01), Kudo et al.
patent: 6051321 (2000-04-01), Lee et al.
patent: 6054206 (2000-04-01), Mountsier
patent: 6054379 (2000-04-01), Yau et al.
patent: 6068884 (2000-05-01), Rose et al.
patent: 6072227 (2000-06-01), Yau et al.
patent: 6080526 (2000-06-01), Yang et al.
patent: 6124641 (2000-09-01), Matsuura
patent: 6140226 (2000-10-01), Grill et al.
patent: 6147009 (2000-11-01), Grill et al.
patent: 6159871 (2000-12-01), Loboda et al.
patent: 6284675 (2001-09-01), Jin et al.
patent: 6287990 (2001-09-01), Cheung et al.
patent: 6303523 (2001-10-01), Cheung et al.
patent: 6312793 (2001-11-01), Grill et al.
patent: 6316063 (2001-11-01), Andideh et al.
patent: 6413583 (2002-07-01), Moghadam et al.
patent: 6441491 (2002-08-01), Grill et al.
patent: 6465372 (2002-10-01), Xia et al.
patent: 6472333 (2002-10-01), Xia et al.
patent: 6479110 (2002-11-01), Grill et al.
patent: 6528432 (2003-03-01), Ngo et al.
patent: 6531398 (2003-03-01), Gaillard et al.
patent: 6537733 (2003-03-01), Campana et al.
patent: 6541398 (2003-04-01), Grill et al.
patent: 6632478 (2003-10-01), Gaillard et al.
patent: 6699784 (2004-03-01), Xia et al.
patent: 2001/0004479 (2001-06-01), Cheung et al.
patent: 2001/0005546 (2001-06-01), Cheung et al.
patent: 2001/0021590 (2001-09-01), Matsuki
patent: 2001/0055672 (2001-12-01), Todd
patent: 2002/0016085 (2002-02-01), Huang et al.
patent: 2002/0068458 (2002-06-01), Chiang et al.
patent: 2002/0098714 (2002-07-01), Grill et al.
patent: 2002/0106500 (2002-08-01), Albano et al.
patent: 2002/0155386 (2002-10-01), Xu et al.
patent: 2003/0006407 (2003-01-01), Leu et al.
patent: 2003/0054115 (2003-03-01), Albano et al.
patent: 2003/0129827 (2003-07-01), Lee et al.
patent: 2003/0139035 (2003-07-01), Yim et al.
patent: 2003/0148020 (2003-08-01), Campana et al.
patent: 2003/0148223 (2003-08-01), Campana et al.
patent: 2003/0194495 (2003-10-01), Li et al.
patent: 2004/0132281 (2004-07-01), Ingerty et al.
patent: 2004/0166240 (2004-08-01), Rhee et al.
patent: 2005/0014391 (2005-01-01), Shioya et al.
patent: 196 54 737 (1997-07-01), None
patent: 198 04 375 (1999-07-01), None
patent: 199 04 311 (1999-08-01), None
patent: 0 771 886 (1997-05-01), None
patent: 0 774 533 (1997-05-01), None
patent: 0 840 365 (1998-05-01), None
patent: 0 849 789 (1998-06-01), None
patent: 0 885 983 (1998-12-01), None
patent: 0 926 715 (1999-06-01), None
patent: 0 926 724 (1999-06-01), None
patent: 0 935 283 (1999-08-01), None
patent: 1 037 275 (2000-09-01), None
patent: 1 123 991 (2001-08-01), None
patent: 1 176 226 (2002-01-01), None
patent: 2 316 535 (1998-02-01), None
patent: 9-8031 (1997-01-01), None
patent: 9-64029 (1997-03-01), None
patent: 9-237785 (1997-09-01), None
patent: 9-251997 (1997-09-01), None
patent: 9-260369 (1997-10-01), None
patent: 10-242143 (1998-09-01), None
patent: 11-251293 (1999-09-01), None
patent: 98/08249 (1998-02-01), None
patent: 98/59089 (1998-12-01), None
patent: 99/38202 (1999-07-01), None
patent: 99/41423 (1999-08-01), None
patent: 99/55526 (1999-11-01), None
patent: 00/01012 (2000-01-01), None
patent: WO 00/19468 (2000-04-01), None
patent: 01/01472 (2001-01-01), None
patent: 02/43119 (2002-05-01), None
patent: WO 03/005429 (2003-01-01), None
“Low Dielectric Constant Insulator Formed by Downstream Plasma CVD at Room Temperature Using TMS/O2”, A. Nara and H.Itoh, Japanese Journal of Applied Physics, vol. 36, No. 3B (Mar. 1997).
“Low Dielectric Constant Films Prepared by Plasma-Enhanced Chemical Vapor Deposition From Tetramethylsilane” A. Grill and V. Patel, Journal of Applied Physics, vol. 85, No. 6 (Mar. 1999).
V. Hazari et al., “Characterization Of Alternative Chemistries For Depositing PECVD Silicon Dioxide Films,” DUMIC Conference,—333D/98/0319, pp. 319-326, Feb. 1998.
K. J. Taylor et al., “Parylene Copolymers”, Spring MRS, Symposium N, pp. 1-9, 1997, no month.
“Novel Low k Dielectrics Based on Diamondlike Carbon Mterials”, A. Grill, et al., J. Electrochem Soc. vol. 145 No. 5, May 1998, pp. 1649-1653.
“Deposition of Low k Dielectric Films Using Trimethylsilane”, M. J. Loboda, et al., Electrochem Soc. Proceedigns, vol. 98-6, pp. 152, 1999, no month.
“Low Dielectric Constant Oxide Films Deposited Using CVD Techniques,” S. McClatchie, et al., Feb. 16-17, 1998, DUMIC Conf., pp. 311-318, Feb.
“Using Trimethylsilane to Imrpove Safety, Throughput and Versatility in PECVD Processes,” M. J. Loboda, et al., Electrochemical Proceedings vol. 97-10, pp. 443-453, no date given.
“Safe Precursor Gas For Broad Replacement of Sih4In Plasma Processes Employed In Integrated Circuit Production,” M. J. Loboda, et al., Materials Research Soc. vol. 447, pp. 145-151, Dec. 1996.
“Plasma Polymerization of Trimethylsilane in Cascade Arc Discharge,” Y.S. Lin, et al., J. Applied Polymer Science, vol. 66, 1653-1665 (1997), no month, but after Feb.
“A Comparative Study of Sub-Micron Gap Filling And PlanarizationTechniques,” A. Haas Bar-Ilan, et al., SPIE vol. 2636, pp. 277-288, no date.
“Reactivity of Alkylsilanes and Alkylcarbosilanes in Atomic Hydrogen-Induced Chemical Vapor Deposition,” A. M. Wrobel, et al., J. Electrochem. Soc., vol. 145, No. 3, Mar. 1998, pp. 1060-1065.
“Diamondlike Carbon Materials As BEOL Interconnect Dielectrics: Integration Issues,” A. Grill, et al., Electrochemical Soc. Proceedings vol. 98-3, pp. 118-129, no date.
Grill, et al. “Diamondlike Carbon Materials as Low-k Dielectrics” Conference Proceedings ULSI XII Materials Research Society, 1997, p. 417-422, no month.
European Search Report for EP 00 11 2300, Dated Aug. 24, 2001.
Peter, “Pursuing the Perfect Low-K Dielectric,” Semiconductor International, Sep., 1998.
Zhao, et al., “Integration of Low Dielectric Constant Materials in Advanced Aluminum and Copper Interconnects,” Mat. Res. Soc. Symp. Proc. vol. 564, 1999, p. 485-497, no month.
Robles, et al., “Characterization of High Density Plasma Chemical Vapor Deposit alpa-Carbon and alpha-Fluorinated Carbon Films for Ultra Low Dielectric Applications,” DUMIC Conference, Feb. 1997, p. 26-33.
Sugahara, et al., “Low Dielectric Constant Carbon Containing SiO2 Films Deposited by PECVD Technique Using a Novel CVD Precursor,” DUMIC Conference, Feb. 1997, p 19-25.
PCT International Search Report and Written Opinion for PCT/US2004/018701, dated Feb. 24, 2005 (AMAT/8435.PC).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Hardness improvement of silicon carboxy films does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Hardness improvement of silicon carboxy films, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Hardness improvement of silicon carboxy films will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3468607

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.