Hardmask trim method

Details Hardmask trim method Hardmask trim method

2006-06-05

2010-12-14

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

Reexamination Certificate

active

07851369

ABSTRACT:
A method for forming features in a polysilicon layer is provided. A hardmask layer is formed over the polysilicon layer. A photoresist mask is formed over the hardmask layer. The hardmask layer is etched through the photoresist mask to form a patterned hardmask. The patterned hardmask is trimmed by providing a non-carbon containing trim gas comprising oxygen and a fluorine containing compound, forming a plasma from the trim gas, and trimming the hardmask. Features are etched into the polysilicon layer through the hardmask.

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Written Opinion dated Dec. 13, 2007 from corresponding International Application No. PCT/US2007/070270.
Office Action dated Jan. 8, 2010 from Chinese Patent Application No. 200780020952.8

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