Photoelectric conversion layer-stacked solid-state imaging...

Details Photoelectric conversion layer-stacked solid-state imaging... Photoelectric conversion layer-stacked solid-state imaging...

2006-02-17

2010-06-22

Parker, Kenneth A (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S431000, C257SE33001

Reexamination Certificate

active

07741689

ABSTRACT:
A photoelectric conversion layer-stacked solid-state imaging element comprises: a semiconductor substrate having a signal reading circuit formed thereon; at least one layer of photoelectric conversion layer each of which is provided interposed between a common electrode layer and a plurality of pixel electrode layers corresponding to pixels, said at least one layer of photoelectric conversion layer being stacked above the semiconductor substrate via a light shielding layer; and inhibiting structures each of which inhibits a reflected light produced by reflection of incident light on the light shielding layer, the incident light having passed through said at least one layer of photoelectric conversion layer and entered into a pixel, from entering in direction toward adjacent pixels.

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