Hardmask manufacture in ferroelectric capacitors

Details Hardmask manufacture in ferroelectric capacitors Hardmask manufacture in ferroelectric capacitors

2009-01-13

2010-10-12

Pham, Hoai v (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S396000, C257SE21648

Reexamination Certificate

active

07811882

ABSTRACT:
A method of manufacturing a semiconductor device. The method comprises fabricating a ferroelectric capacitor. The capacitor's fabrication includes forming conductive and ferroelectric material layers on a semiconductor substrate, forming a hardmask layer on the conductive and ferroelectric material layers, forming an organic bottom antireflective coating layer on the hardmask layer, and, patterning the organic bottom antireflective coating layer. Seasoning in a hardmask etching chamber is substantially unaffected by the patterning.

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patent: 2008/0311683 (2008-12-01), Wang
U.S. Appl. No. 12/025,207, filed Feb. 4, 2008, entitled “An Improved Ferroelectric Capacitor Manufacturing Process”; to Francis Gabriel Celii, et al.

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