Hard mask for metal patterning

Details Hard mask for metal patterning Hard mask for metal patterning

1998-09-30

2000-07-25

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Alignment marks

257915, H01L 23544

Patent

active

060939737

ABSTRACT:
An oxide hard mask is formed between a deep ultraviolet photoresist and an anti-reflective coating to prevent interactions with the photoresist, thereby preventing reduction of a critical dimension of a patterned conductive layer. Embodiments include depositing a substantially nitrogen free oxide layer on the anti-reflective coating, such as a silicon oxide derived from tertaethyl orthosilicate by plasma enhanced chemical vapor deposition.

REFERENCES:
patent: 5747388 (1998-05-01), Kusters et al.
patent: 5760483 (1998-06-01), Bruce et al.
patent: 5814563 (1998-09-01), Ding et al.
patent: 5835226 (1998-11-01), Berman et al.
patent: 6005295 (1999-12-01), Hattori
patent: 6008129 (1999-12-01), Graff et al.

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