Halogen gettering method for forming field effect transistor...

Details Halogen gettering method for forming field effect transistor... Halogen gettering method for forming field effect transistor...

2006-02-07

2006-02-07

Nguyen, Cuong (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S153000

Reexamination Certificate

active

06995064

ABSTRACT:
A thermal oxidation method for forming a gate dielectric layer for use within a field effect transistor device employs a thermal oxidizing atmosphere comprising a halogen getter material. By employing the halogen getter material, the field effect transistor device is formed with enhanced performance, in particular with respect to negative bias temperature instability lifetime.

REFERENCES:
patent: 5506178 (1996-04-01), Suzuki et al.
patent: 6586289 (2003-07-01), Dokumaci et al.
patent: 6713824 (2004-03-01), Mikata et al.

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