Hafnium tantalum oxynitride high-k dielectric and metal gates

Details Hafnium tantalum oxynitride high-k dielectric and metal gates Hafnium tantalum oxynitride high-k dielectric and metal gates

2006-08-31

2009-10-20

Lee, Hsien-ming (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C438S299000, C438S303000, C257SE29255, C257S387000

Reexamination Certificate

active

07605030

ABSTRACT:
Electronic apparatus and methods may include a hafnium tantalum oxynitride film on a substrate for use in a variety of electronic systems. The hafnium tantalum oxynitride film may be structured as one or more monolayers. The hafnium tantalum oxynitride film may be formed using atomic layer deposition. Metal electrodes may be disposed on a dielectric containing a hafnium tantalum oxynitride film.

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