Hafnium tantalum oxynitride dielectric

Details Hafnium tantalum oxynitride dielectric Hafnium tantalum oxynitride dielectric

2009-10-19

2011-12-27

Lee, Hsien Ming (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S785000, C257S632000, C257S635000, C257SE21295

Reexamination Certificate

active

08084370

ABSTRACT:
Electronic apparatus and methods may include a hafnium tantalum oxynitride film on a substrate for use in a variety of electronic systems. The hafnium tantalum oxynitride film may be structured as one or more monolayers. The hafnium tantalum oxynitride film may be formed using atomic layer deposition. Metal electrodes may be disposed on a dielectric containing a hafnium tantalum oxynitride film.

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