Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-07-16
2009-06-02
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S419000, C438S433000, C438S529000, C257SE21544, C257SE21545, C257SE29013
Reexamination Certificate
active
07541247
ABSTRACT:
A semiconductor structure and a method for forming the same. The method includes providing a semiconductor structure. The semiconductor structure includes a semiconductor substrate. The method further includes simultaneously forming a first doped transistor region of a first transistor and a first doped guard-ring region of a guard ring on the semiconductor substrate. The first doped transistor region and the first doped guard-ring region comprise dopants of a first doping polarity. The method further includes simultaneously forming a second doped transistor region of the first transistor and a second doped guard-ring region of the guard ring on the semiconductor substrate. The second doped transistor region and the second doped guard-ring region comprise dopants of the first doping polarity. The second doped guard-ring region is in direct physical contact with the first doped guard-ring region. The guard ring forms a closed loop around the first and second doped transistor regions.
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Fourson George
International Business Machines - Corporation
Sabo William D.
Schmeiser Olsen & Watts
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