Guard ring structure for improving crosstalk of backside...

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Reexamination Certificate

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C257S460000, C257S787000

Reexamination Certificate

active

07485940

ABSTRACT:
The present disclosure provides a backside illuminated semiconductor device. The device includes a substrate having a front surface and a back surface; a plurality of sensor elements formed in the substrate, each of the plurality of sensor elements is designed and configured to receive light directed towards the back surface; and a sensor isolation feature formed in the substrate, and disposed horizontally between two adjacent elements of the plurality of sensor elements, and vertically between the back surface and the front surface.

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Williams, George M., “Back-Illuminated CCD Imagers for High Information Content Digital Photography”, SPIE, vol. 3302, Apr. 1998, pp. 39-53.

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