Growth of GaN on a substrate using a ZnO buffer layer

Details Growth of GaN on a substrate using a ZnO buffer layer Growth of GaN on a substrate using a ZnO buffer layer

1997-11-26

2000-02-29

Bowers, Charles

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Plural fluid growth steps with intervening diverse operation

438478, 438479, 438482, 438483, 117952, H01L 2120

Patent

active

060308869

ABSTRACT:
To present a manufacturing method of semiconductor device capable of forming a homogeneous and highly reproducible gallium nitride crystal, comprising the steps of forming a zinc oxide layer on a monocrystalline substrate, forming a first gallium nitride crystal in a temperature range from 0.degree. C. to 900.degree. C., and forming a second gallium nitride crystal in a temperature range from 900.degree. C. to 2000.degree. C.

REFERENCES:
patent: 4473938 (1984-10-01), Kobayashi et al.
patent: 5278435 (1994-01-01), Van Hove et al.

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