Group III-V crystal and manufacturing method thereof

Details Group III-V crystal and manufacturing method thereof Group III-V crystal and manufacturing method thereof

2007-11-20

2007-11-20

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S603000, C438S604000, C257S189000, C257S200000

Reexamination Certificate

active

10521060

ABSTRACT:
A method of manufacturing a group III-V crystal is made available by which good-quality group III-V crystals are easily obtained at low cost without causing cracks, even when using a variety of substrates. A method of manufacturing a group III-V crystal, characterized in including: a step of depositing a metal film (2) on a substrate (1); a step of heat-treating the metal film (2) in an atmosphere in which a patterning compound is present; and a step of growing a group III-V crystal (4) on the metal film after the heat treatment. Additionally, a method of manufacturing a group III-V crystal, characterized in including: a step of growing a group III-V compound buffer film on the metal film after the heat treatment; and a step of growing a group III-V crystal on the group III-V compound buffer film.

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