Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive
Reexamination Certificate
2007-06-28
2009-06-09
Thai, Luan C (Department: 2891)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Physical stress responsive
C438S051000, C438S048000, C438S053000, C438S706000, C438S739000
Reexamination Certificate
active
07544531
ABSTRACT:
To suppress stiction of a MEMS resonator during fabrication, conductive structures of the MEMS resonator are electrically coupled via a ground strap during the step of forming isolation trenches around their contact structures. After the isolation trenches have been formed, the ground strap is transformed into a non-conductive material to complete the electrical isolation of the conductive structures. An etch mask formed on top of the ground strap prevents etching of the ground strap during the formation of the trenches. Depending on the etching process, the ground strap may be formed as a bridge that suspends above the isolation trench or as a column that extends down to the bottom of the isolation trench.
REFERENCES:
patent: 6136630 (2000-10-01), Weigold et al.
patent: 6374677 (2002-04-01), Berlin et al.
patent: 6429458 (2002-08-01), Weigold et al.
patent: 6717488 (2004-04-01), Potter
patent: 6777263 (2004-08-01), Gan et al.
patent: 7115436 (2006-10-01), Lutz et al.
patent: 7449355 (2008-11-01), Lutz et al.
patent: 2006/0207087 (2006-09-01), Jafri et al.
patent: 2006/0214746 (2006-09-01), Nakamura
Patterson & Sheridan LLP
SiTime Inc.
Thai Luan C
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