Graft polymerized SiO.sub.2 lithographic masks

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Electron beam imaging

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

430311, 430325, 430328, 430330, 430942, 430967, G03C 500

Patent

active

045967610

ABSTRACT:
This invention provides a process, and delineates typical materials to be used in that process, which enables the use of a precision radiation source to produce a microcircuit resist image accurate to a few micrometers or even fractions of a micrometer. In addition, the process of the invention provides for the dry development of this image, thus insuring the ability to create a finished resist structure exhibiting the same accuracy in dimensions.
Specifically, the invention provides a process in which a positive or negative resist polymer is irradiated under low pressure using a precision radiation source such as an electron beam, masked ion beam, or focused ion beam to generate organic free radicals. After irradiation, the reactive resist polymer is exposed to oxygen or air to create peroxides or hydroperoxides. The peroxides or hydroperoxides are later thermally decomposed to generate organic free radicals which can be reacted with a silicon-containing organic molecule which contains at least one vinyl or other functional group capable of reacting with the organic free radical. The resulting copolymer resist then includes a latent image containing silicon, which can be dry developed using plasma or reactive ion etching techniques.
In another embodiment of this invention, an intermediary non-silicon-containing organic molecule is grafted to the active sites on the resist polymer. The organic molecule is then reacted with a silicon-containing compound, so that it becomes a grafting intermediary between the initial polymeric resist and the silicon-containing compound.

REFERENCES:
patent: 4195108 (1980-03-01), Gazard et al.
patent: 4232110 (1980-11-01), Taylor
patent: 4237208 (1980-12-01), Desai et al.
patent: 4301231 (1981-11-01), Atarashi et al.
patent: 4348472 (1982-09-01), Jagt
patent: 4383026 (1983-05-01), Hall
patent: 4386152 (1983-05-01), Lai
patent: 4396704 (1983-08-01), Taylor
Hattori et al., "A Breakthrough to Plasma Deposited Dry-Developable E-Beam Resist", Society of Plastic Engineers, Nov. 8-10, 1982, Ellenville, N.Y.
Gazard et al., Polymer Engineering and Science, Nov. 1980, vol. 20, No. 16, pp. 1069-1072.
Taylor et al., VISI Electronics: Microstructure Science, vol. 6, 1983, chapter 4.
Taylor et al., J. Vac. Sci. Technol., vol. 19, No. 4, Nov./Dec. 1981, pp. 872-880.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Graft polymerized SiO.sub.2 lithographic masks does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Graft polymerized SiO.sub.2 lithographic masks, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Graft polymerized SiO.sub.2 lithographic masks will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2085167

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.