Gradient low k material

Details Gradient low k material Gradient low k material

2008-01-22

2008-01-22

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S623000

Reexamination Certificate

active

07320945

ABSTRACT:
A thin film dielectric layer comprises a top portion and a bottom portion and has density and permittivity characteristics that vary substantially uniformly from the top portion to the bottom portion. Control over the density and/or permittivity is accomplished through varying deposition parameters such as flow rate of constituent process gases or deposition chamber pressure, or through a post deposition treatment, such as plasma treatment or curing.

REFERENCES:
patent: 6992003 (2006-01-01), Spencer et al.

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