Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-11-30
2009-06-09
Quach, Tuan N. (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S618000, C257S629000, C257SE29070
Reexamination Certificate
active
07544984
ABSTRACT:
One aspect of this disclosure relates to a memory device, comprising at least one gettering region, a memory array, a plurality of word lines and bit lines, and control circuitry. The gettering region is formed in a semiconductor substrate. The gettering region includes a precise arrangement of precisely-formed voids to getter impurities from a crystalline semiconductor region of the substrate. The memory array is formed in the crystalline semiconductor region, and includes a plurality of memory cells formed in rows and columns, and at least one transistor for each of the plurality of memory cells. Each word line is connected to a row of memory cells, and each bit line is connected to a column of memory cells. The control circuitry includes word line select circuitry and bit line select circuitry to select a number of memory cells for writing and reading operations.
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Forbes Leonard
Geusic Joseph E.
Micro)n Technology, Inc.
Quach Tuan N.
Schwegman Lundberg & Woessner, P.A.
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