Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Gettering of semiconductor substrate
Reexamination Certificate
2005-08-16
2005-08-16
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Gettering of semiconductor substrate
C438S402000, C438S471000
Reexamination Certificate
active
06929984
ABSTRACT:
One aspect of this disclosure relates to a method for creating a gettering site in a semiconductor wafer. In various embodiments, a predetermined arrangement of a plurality of holes is formed in the semiconductor wafer through a surface of the wafer. The wafer is annealed such that the wafer undergoes a surface transformation to transform the arrangement of the plurality of holes into a predetermined arrangement of at least one empty space of a predetermined size within the wafer to form the gettering site. One aspect relates to a semiconductor wafer. In various embodiments, the wafer includes at least one device region, and at least one gettering region located proximate to the at least one device region. The gettering region includes a precisely-determined arrangement of a plurality of precisely-formed voids that are formed within the wafer using a surface transformation process. Other aspects and embodiments are provided herein.
REFERENCES:
patent: 4241359 (1980-12-01), Izumi et al.
patent: 4314595 (1982-02-01), Yamamoto et al.
patent: 4589928 (1986-05-01), Dalton et al.
patent: 4717681 (1988-01-01), Curran
patent: 5098852 (1992-03-01), Niki et al.
patent: 5426061 (1995-06-01), Sopori
patent: 5443661 (1995-08-01), Oguro et al.
patent: 5461243 (1995-10-01), Ek et al.
patent: 5471180 (1995-11-01), Brommer et al.
patent: 5526449 (1996-06-01), Meade et al.
patent: 5646053 (1997-07-01), Schepis
patent: 5661044 (1997-08-01), Holland et al.
patent: 5691230 (1997-11-01), Forbes
patent: 5739796 (1998-04-01), Jasper et al.
patent: 5759898 (1998-06-01), Ek et al.
patent: 5773152 (1998-06-01), Okonogi
patent: 5789859 (1998-08-01), Watkins et al.
patent: 5840590 (1998-11-01), Myers, Jr. et al.
patent: 5879996 (1999-03-01), Forbes
patent: 5963817 (1999-10-01), Chu et al.
patent: 5997378 (1999-12-01), Dynka et al.
patent: 5999308 (1999-12-01), Nelson et al.
patent: 6001711 (1999-12-01), Hashimoto
patent: 6022793 (2000-02-01), Wijaranakula et al.
patent: 6054808 (2000-04-01), Watkins et al.
patent: 6075640 (2000-06-01), Nelson
patent: 6083324 (2000-07-01), Henley et al.
patent: 6093623 (2000-07-01), Forbes
patent: 6093624 (2000-07-01), Letavic et al.
patent: 6127777 (2000-10-01), Watkins et al.
patent: 6139626 (2000-10-01), Norris et al.
patent: 6172456 (2001-01-01), Cathey et al.
patent: 6174784 (2001-01-01), Forbes
patent: 6204145 (2001-03-01), Noble
patent: 6228694 (2001-05-01), Doyle et al.
patent: 6251751 (2001-06-01), Chu et al.
patent: 6261876 (2001-07-01), Crowder et al.
patent: 6274460 (2001-08-01), Delgado et al.
patent: 6309950 (2001-10-01), Forbes
patent: 6315826 (2001-11-01), Muramatsu
patent: 6338805 (2002-01-01), Anderson
patent: 6339011 (2002-01-01), Gonzalez et al.
patent: 6368938 (2002-04-01), Usenko
patent: 6376336 (2002-04-01), Buynoski
patent: 6377070 (2002-04-01), Forbes
patent: 6383924 (2002-05-01), Farrar et al.
patent: 6391738 (2002-05-01), Moore
patent: 6423613 (2002-07-01), Geusic
patent: 6424001 (2002-07-01), Forbes et al.
patent: 6436187 (2002-08-01), Patel et al.
patent: 6444534 (2002-09-01), Maszara
patent: 6448601 (2002-09-01), Forbes et al.
patent: 6452713 (2002-09-01), White et al.
patent: 6461933 (2002-10-01), Houston
patent: 6478883 (2002-11-01), Tamatsuka et al.
patent: 6496034 (2002-12-01), Forbes et al.
patent: 6531727 (2003-03-01), Ahn et al.
patent: 6538330 (2003-03-01), Forbes
patent: 6541356 (2003-04-01), Fogel et al.
patent: 6542682 (2003-04-01), Cotteverte et al.
patent: 6559491 (2003-05-01), Forbes et al.
patent: 6566682 (2003-05-01), Forbes
patent: 6579738 (2003-06-01), Farrar et al.
patent: 6582512 (2003-06-01), Geusic et al.
patent: 6583437 (2003-06-01), Mizuno et al.
patent: 6593625 (2003-07-01), Mooney et al.
patent: 6597203 (2003-07-01), Forbes
patent: 6630713 (2003-10-01), Geusic
patent: 6649476 (2003-11-01), Forbes
patent: 6656822 (2003-12-01), Doyle et al.
patent: 6740913 (2004-05-01), Doyle et al.
patent: 2002/0001965 (2002-01-01), Forbes
patent: 2002/0062782 (2002-05-01), Norris et al.
patent: 2002/0070419 (2002-06-01), Farrar et al.
patent: 2002/0070421 (2002-06-01), Ashburn
patent: 2002/0076896 (2002-06-01), Farrar et al.
patent: 2002/0175330 (2002-11-01), Geusic
patent: 2002/0185686 (2002-12-01), Christiansen et al.
patent: 2003/0027406 (2003-02-01), Malone
patent: 2003/0042627 (2003-03-01), Farrar et al.
patent: 2003/0133683 (2003-07-01), Forbes
patent: 2003/0157780 (2003-08-01), Farrar et al.
patent: 2003/0190796 (2003-10-01), Geusic
patent: 2003/0201468 (2003-10-01), Christiansen et al.
patent: 2003/0218189 (2003-11-01), Christiansen et al.
patent: 2003/0227072 (2003-12-01), Forbes
patent: 2004/0171196 (2004-09-01), Walitzki
patent: 434984 (1991-09-01), None
patent: 1030196 (2000-08-01), None
patent: 1085352 (2001-03-01), None
patent: 2001-093887 (2001-04-01), None
patent: WO-98/35248 (1998-08-01), None
patent: WO-WO02097982 (2002-12-01), None
“Cornell Demonstrates a Universal Substrate”,Compound Semiconductor, 3(2), (Mar./Apr. 1997), 27-29.
Abe, T , “Silicon Wafer-Bonding Process Technology for SOI Structures”,Extended Abstracts of the 22nd(1990 International)Conference on Solid State Devices and Materials,(1990),853-856.
Auberton-Herve, A J., “SOI: Materials to Systems”,International Electron Devices Meeting, Technical Digest,(1996),3-10.
Autumn, Kellar, et al., “Adhesive force of a single gecko foot-hair”,Nature, 405(6787), (Jun. 2000),681-685.
Autumn, Kellar , et al., “Evidence for van der Waals adhesion in gecko setae.”,Proceedings of the National Academy of Science U S A.: 99(19), (Sep. 17, 2002), 12252-6.
Baginski, T. A., “Back-side germanium ion implantation gettering of silicon”,Journal of the Electrochemical Society, 135(7), Dept of Electrical Engineering, Auburn Univ, AL,(Jul. 1988),1842-3.
Banhart, John , “Manufacture, characterisation and application of cellular metals and metal foams”,Progress in Materials Science, vol. 46, Issue 6,(2001),559-632.
Banhart, John , et al., “On the road again: metal foams find favor”,Physics Today 55(7), (Jul. 2002),37-42.
Belford, Rona E., et al., “Performance-Augmented CMOS Using Back-End Uniaxial Strain”,IEEE 60th DRC. Conference Digest Device Research Conference, 2002,(Jun. 24-26, 2002),41-42.
Berti, M. , “Composition and Structure of Si-Ge Layers Produced by Ion Implantation and Laser Melting”,Journal of Materials Research, 6(10), (Oct. 1991), 2120-2126.
Berti, M. , “Laser Induced Epitaxial Regrowth of Si1—xGex/Si Layers Produced by Ge Ion Implantation”,Applied Surface Science, 43,(1989),158-164.
Bialas, F. , et al., “Intrinsic Gettering of 300 mm CZ Wafers”,Microelectronic Engineering, 56(1-2), (May 2001),157-63.
Biever, Celeste , “Secret of ‘strained silicon’ revealed: behind closed doors, Intel has prefected a novel way to improve chip performance.”,New Scientist, 180(i2426-2428), (Dec. 20, 2003),27.
Binns, M. J., et al., “The Realization of Uniform and Reliable Intrinsic Gettering in 200mm P- & P/P Wafers for a Low Thermal Budget 0.18 mu m Advanced CMOS Logic Process”,Diffusion and Defect Data Pt.B: Solid State Phenomena, 82-84,(2001),387-92.
Birner, A , et al., “Macroporous silicon: a two-dimensional photonic bandgap material suitable for the near-infared spectral range”,Physica Status Solidi A: 65(1), (Jan. 16, 1998), 111-117.
Birner, A. , et al., “Silicon-Based Photonic Crystals”,Advanced Materials, 13(6), (Mar. 2001),377-388.
Blanco, A , et al., “Large-scale synthesis of a silicon photonic crystal with a complete three-dimensional bandgap near 1.5 micrometres”,Nature, 405(6785), (May 25, 2000),437-40.
Blanford, C F., et al., “Gems of Chemistry and Physics: Macroporous Metal Oxides with 3D Order”,Advanced Materials, 13(6), (Mar. 2001).
Bronner, G. B., et al., “Physical Modeling of Backside Gettering”,Impurity Diffusion and Gettering in Silicon Symposium,Sponsor: Mater. Res. Soc, Nov.
Forbes Leonard
Geusic Joseph E.
Estrada Michelle
Fourson George
Micro)n Technology, Inc.
Schwegman Lundberg Woessner & Kluth P.A.
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