Germanium as an antireflective coating and method of use

Details Germanium as an antireflective coating and method of use Germanium as an antireflective coating and method of use

1995-09-25

1998-05-12

Dang, Trung

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Multiple layers

438763, 438947, 438952, 438950, H01L 2131

Patent

active

057504423

ABSTRACT:
Germanium is employed as an antireflective coating material for use in active area lithography and gate area lithography steps in the formation of a semiconductor integrated circuit. A germanium layer is deposited over an active area nitride layer or over a gate area nitride layer, and a photoresist layer is then formed on the germanium layer. The photoresist layer is than exposed and developed. During exposure, the germanium layer substantially reduces reflection from the underlying nitride layer, thereby relieving the dependency of exposure energy and resulting line width on the underlying nitride layer thickness. Germanium-silicon may also be employed as the antireflective layer.

REFERENCES:
patent: 5378659 (1995-01-01), Roman et al.
patent: 5580701 (1996-12-01), Lur et al.
patent: 5656128 (1997-08-01), Hashimoto et al.

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