(Ge,Si) Nx anti-reflective compositions and integrated circuit d

Details (Ge,Si) Nx anti-reflective compositions and integrated circuit d (Ge,Si) Nx anti-reflective compositions and integrated circuit d

1997-10-23

1999-11-16

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257616, 257741, H01L 310232

Patent

active

059863188

ABSTRACT:
An anti-reflective composition used in manufacturing integrated circuit devices comprises a silicon-added germanium nitride material. The composition is present in a solid solution.

REFERENCES:
patent: 4870322 (1989-09-01), Matsudaira et al.
patent: 5378659 (1995-01-01), Roman et al.
patent: 5733712 (1998-03-01), Tanaka et al.
patent: 5741626 (1998-04-01), Jain et al.
patent: 5750442 (1998-05-01), Juengling
patent: 5820926 (1998-10-01), Lien
patent: 5841179 (1998-11-01), Pramanick et al.

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